Description
Specifications
Semiconductor Laser | |
CW Output Power | ≤ 500 mW |
Polarization | TE |
Center Wavelength | 808 ± 10 nm |
Operation Temperature Range | 10 ~ 40 °C |
Driving Current | 0 ~ 500 mA |
Nd: YVO4 Crystal | |
Nd Doping Concentration | 0.1 ~ 3 atm% |
Dimension | 3×3×1 mm |
Flatness | < λ/10 @632.8 nm |
Coating | AR@1064 nm, R<0.1%; T>90%@808 nm |
KTP Crystal | |
Transmissive Wavelength Range | 0.35 ~ 4.5 µm |
Electro-Optic Coefficient | r33=36 pm/V |
Dimension | 2×2×5 mm |
Output Mirror | |
Diameter | Φ 6 mm |
Radius of Curvature | 50 mm |
He-Ne Alignment Laser | ≤ 1 mW @632.8 nm |
IR Viewing Card | Spectral response range: 0.7 ~ 1.6 µm |
Laser Safety Goggles | OD= 4+ for 532 nm, 808 nm, and 1064 nm |
Optical Power Meter | 2 μW ~ 200 mW, 6 scales |
Part List
Description | Qty |
Optical Rail (LEPO-54) | 1 |
Two Axis Adjustment Holder (SZ-21) | 2 |
Four Axis Adjustment Holder (SZ-24) | 2 |
He-Ne Laser Holder (SZ-42) | 1 |
808 nm Semiconductor Laser | 1 |
632.8 nm He-Ne Alignment Laser (LLL-2A) | 1 |
KTP Crystal | 1 |
Nd: YVO4 Crystal | 1 |
Output Mirror | 1 |
Optical Filter | 1 |
Alignment Aperture | 1 |
Optical Power Meter | 1 |
Power Cord | 2 |
IR Viewing Card | 1 |
Laser Safety Goggles | 1 |
User’s Manual | 1 |
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